ABDULLAYEV, J.SH.; SAPAEV, I.B. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES. Eurasian Physical Technical Journal, [S. l.], v. 21, n. 3(49), p. 21–28, 2024. DOI: 10.31489/2024No3/21-28. Disponível em: https://phtj.buketov.edu.kz/EPTJ/article/view/1028. Acesso em: 1 apr. 2026.