Abdullayev, J.SH., and I.B. Sapaev. “OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES”. Eurasian Physical Technical Journal 21, no. 3(49) (September 30, 2024): 21–28. Accessed March 18, 2026. https://phtj.buketov.edu.kz/EPTJ/article/view/1028.