Влияние электронного облучения на кристаллическую структуру, микрорельеф поверхности и зондированную ширину тройных кристаллов допированного железом таллия и моноселинида индия.
DOI:
https://doi.org/10.31489/2023No4/23-32Ключевые слова:
монокристалл, кристаллическая структура, элементарная ячейка, пространственная группа, электронное облучение, флюенс, размер кристаллитов, шероховатостьАннотация
В данной работе исследовано влияние электронного облучения на структуру, морфологию поверхности и запрещенную зону моно- и поликристаллов легированных железом тройных кристаллов моноселинидов таллия и индия. Установлено, что синтезированные поликристаллические образцы, а также выращенные монокристаллы моноселинидов таллия и индия являются однофазными. Кристаллы имеют тетрагональную элементарную ячейку (пр. гр. I4/мкм) со следующими параметрами решетки: a ~ b = 8,12 Å, c = 6.88 Å, α=β=γ = 90°. Облучение электронами с энергией 2 МэВ и плотностью тока пучка 0,085 мкА/см2 приводит к изменениям структуры и свойств кристаллов сложным образом в зависимости от флюенса электронов. Также приводит к изменению параметров кристаллической решетки, увеличению максимального значения среднеарифметического отклонения профиля, а также уменьшению высоты средней шероховатости поверхности облученных кристаллов. Облучение порошкового образца электронами с плотностью энергии 5x1016 эл/см2 способствует увеличению размера нанокристаллитов с 32.50 нм до 43.33 нм.
Библиографические ссылки
Umarov S.Kh., Nuritdinov I. Study of photoelectric properties of TlInS2xSe2(1-x) solid solutions. Perspective materials, 2002, No. 3, pp. 25 – 27.[in Russian]
Nuritdinov I., Umarov S.Kh., Rustamov V.D. The influence of group I and IV impurities on the photoelectric properties of TlInSe2 single crystals. Perspective materials, 2003. No.1, pp. 46 – 48. [in Russian]
Umarov S.Kh., Nuritdinov I., Dluraev Sh.N. Study of structural phase transitions of TlInSe2 crystals using electrical and photoelectric methods. Perspective materials, 2003, No. 5, pp. 34 – 36. [in Russian]
Guseinov G.D., Mateev A.K., Malsagov M.A., Umarov S.Kh., Abdullaev E.G., Yuraev N.D. Effect of Pressure in Electrisal Conductivity of TlInSe2 Single Crystals. Phys. Stat. Sol., 1985, Vol. 90, pp.703 – 708. doi:10.1515/9783112494806-035
Umarov S.Kh., Rustamov V.D., Nuritdinov I. TlInS2xSe2(1-x) (0≤x≤0.3) single crystals are an effective material for semiconductor strain gauging. Advanced materials, 2002, No. 6, pp.41 – 42. [in Russian]
Alekseev I.V. A Neutron Semiconductor Detector Based on TlInSe2. Instruments and Experimental Techniques, 2008, Vol. 51, No. 3, pp. 331–335. doi:10.1134/S0020441208030020
Sheleg A.U., Gurtova V.G., Shevtsova V.V., Mustafaeva S.N., Kerimova E.M. The influence of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals. Solid State Physics, 2012, Vol.54, Is.9, pp. 1754 – 1757. doi:10.1134/S1063783412090284
Shalimova K.V. Physics of semiconductors. Moscow, Energy. 1976, pp.24 – 26. [in Russian]
Chernyaev A.P. Radiation technologies. The science. National economy. Medicine. Moscow, Moscow Univ. Publ. House. 2019, 231 p. [in Russian]. doi:10.3103/S0027134915060090
Madatov R.S., Najafov A.I., Mamedov V.S., Mamedov M.A. Anisotropy of electrical conductivity in irradiated TlInS2 crystals. Electronic processing of materials, 2010, No. 2, pp. 77 – 79. doi:10.3103/S1068375510020122
Smirnova L.S. Physical processes in irradiated semiconductors. Novosibirsk, Nauka. 1977, 256 p. [in Russian]
Sardarova N.S., Barkhalov B.Sh., NurullaevYu.G., Verdieva N.A., Jafarov M.B. Electrical properties of crystals of TlInS2-TlEuS2 solid solutions of various compositions. Science, technology and education, 2016. No.11(29), pp. 6 – 9.
Gahramanov N.F., Barkhalov B.Sh., NurullaevYu.G., Sardarova N.S., Verdieva N.A. Effect of irradiation on the thermal conductivity of single crystals of the TlIn0,97 Dy0,03Se2 solid solution. Science, technology and education, 2020, No. 9(73), pp. 6 – 11. [in Russian]
Samedov O.A., Dadashov I.Sh., Samedov S.F., Bayramov A.A., Nurullayev Y.Q., Salmanov F.T. Influence of gamma irradiation on dielectric properties of TlInS2 doped dy ytterbium. Proceeding of the International Conference “Nuclear Science and its Applications”, Samarkand, Uzbekistan, 2012, pp. 180 – 190. https://www.researchgate.net/publication/373076563
Umarov S.Kh., Gasanov N.Z., Ashurov Zh.J., Khodzhaev U.O., Narzullaeva Z.M. Technology for producing doped layered single crystals TlMC2VI (M- In, Ga; C- S, Se). Way Science. Proceedings of the 2ndIntern. Scientific and Practical Conference“Integration of education, science and business in the current environment: summer debates”. Dnipro, Ukraine, 2020, pp.495.[in Russian]
Tashmetov M.Yu., Khallokov F.K., Ismatov N.B., Yuldashova I.I., Nuritdinov I., Umarov S.Kh.. Study of the influence of electronic radiation on the surface, structure and Raman spectrum of a TlInS2 single crystal // Physica B: Condensed Matter, 2021, Vol.613, 412879. doi: 10.1016/j.physb.2021.412879
Tashmetov M. Yu., Ismatov N.B., Saidov R.P., Maxkamov Sh.M. Radiation treatment complex on the base of the “electronics U-003" electron accelerator. Problems of Atomic Science and Technology, 111(5):91-97. [in Russian] https://www.researchgate.net/publication/321154001
Rodriguez-Carvajal J. Structural analysis from powder diffraction data : the Rietveld method Ecolethématique « Cristallographie et neutrons », JournéesRossatMignod, 1997, Cours - Tome I , 32 p.
Langford J.I., Wilson A.J.C., Scherrer P. After Sixty Years: A survey and some new results in the determination of crystallite size. Journal of Applied Crystallography, 1978, Vol.11, pp. 102 – 113.
Hassan M., Younas S., Sher F., Husain S.S., Riaz S., Naseem S. Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique. Applied Physics A., 2017, Vol. 123(1), pp. 352. doi:10.1007/s00339-017-0975-5
Bhargava R.N., Gallagher D., Hong X., Nurmikko A. Optical Properties of Manganese-Doped Nanocrystals of ZnS. Physical Review Letter, 1994, Vol.72, pp. 416- 419. doi:10.1103/PhysRevLett.72.416
Ukhanov Yu.I. Optical properties of semiconductors. Moscow, Science, 1977, 368 p.
Nuridinov I., Umarov S.K. Effect of ionizing radiation and heat treatment on the photosensitivity of TIInSe2 crystals. At Energy, 2000, Vol. 88, Is. 4, 322–324. doi:10.1007/BF02673619.
Nuritdinov I., Umarov S.Kh. The influence of ionizing radiation on the photoelectric and electrophysical characteristics of TlInSe2 crystals. In the book: Nuclear and radiation physics, Almaty, 2001, pp.111 – 118. [in Russian]
Koshkin V.I., Mankov B.I., Galchinetsky L.P., Kulik V.V. Thermodynamics of unstable vacancy-atom pairs at an interstitial site. FTT, 1973, Vol.15, pp. 128-132.[in Russian]
Indenbom V.L. A new hypothesis about the mechanism of radiation-stimulated processes. Letters to ZhTF, I979, Vol.5, pp. 489 – 492. [in Russian]:https://inis.iaea.org/search/search.aspx?orig_q=RN:11496581
Annenkov Yu.M. Defect formation and mass transfer in ionic structures under intense irradiation with ionizing radiation. Diss. for the scientific degree of doctor... Tomsk, 2002, 471 p.
Chernov I.P. Ordering the structure of crystals by ionizing radiation (the effect of small doses of ionizing radiation). News of Tomsk Polytechnic Univ., 2000, Vol.303, Is.1. pp.74-80.http://earchive.tpu.ru/handle/11683 /2671
Zhetbaeva M.P., Indenbom V.L., Kirsanov V.V., Chernov V.M. Migration of defects stimulated by the formation and collapse of an unstable Frenkel pair. Letters to ZhTP, 1979, Vol. 5, pp.1157 – 1161.[in Russian]
Zolnikov K.P., Korchuganov A.V., Kryzhevich D.S., Chernov V.M., Psakhye S.G. Shock waves in metal crystallites under radiation exposure. VANT. Ser. Thermonuclear synthesis, 2015, Vol.38, No. 2, pp. 68-74. doi:10.21517/0202-3822-2015-38-2-68-74
Mamontov A.P., Chernov I.P. Small dose ionizing radiation effect. [Effekt malykh doz ioniziruiushchego izlucheniia]. Tomsk, 2009. 286 p. [in Russian]
Rakhmatov A.Z., Tashmetov M.Yu., Sandler L.S. The influence of penetrating radiation on the parameters of high-voltage planar rectifier diodes. Issues of atomic science and technology, series Physics of radiation damage and radiation materials science, 2011, Vol. 98, No. 4, pp. 26 – 33.
Bilenko D.I., Galushka V.V., Zharkova E.A., et al. The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon. Tech. Phys. Lett., 2017, 43, pp.166–168. doi:10.1134/S1063785017020031.
Chernov I. P., Mamontov A.P., Botaki A.A., Cherdantsev P.A., Chakhlov B.V., Sharov S.R., Timoshnikov Yu.A., Filipenko L.A. Anomalous effect of small doses of ionizing radiation on metals and alloys. Radiation Effects, 1986, Vol. 97, No.1-2, pp. 155 – 160. doi:10.1080/00337578608208729
Annenkov Yu.M. The nature of high-temperature radiation-accelerated diffusion in alkali halide crystals. News of Tomsk Polytechnic University, 2006, Vol.309, No.3, pp. 46 – 50.