"WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS "
DOI:
https://doi.org/10.31489/2020No2/39-44Keywords:
porous silicon, energy band gap, current-voltage, electrochemical etching, laser, chaos.Abstract
The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous silicon and on thin films of a chalcogenide glassy semiconductor. The existence of jump-like switching and current hysteresis in porous silicon nanofilms under laser illumination is shown experimentally.A connection between the switching voltage values and the dependence of the band gap on the porosity of nanofilms is found. These results make it possible to construct a theory of current switching and its hysteresis based on the concepts of the theory of second-order phase transitions.
References
"1 Sun C. Q., Sun X. W., Tay B. K., Lau S. P., Huang H., Li S. Dielectric suppression and its effect on photoabsorption of nanometric semiconductors. Journal of Physics D: Applied Physics, 2001, Vol. 34, No. 15, pp. 2359.
Pan L. K., Huang H. T., Sun C.Q. Dielectric relaxation and transition of porous silicon.Journal of applied physics, 2003, Vol. 94, No. 4, pp. 2695-2700.
Pan L. K., Sun C. Q. Coordination imperfection enhanced electron-phonon interaction. Journal of applied physics, 2004, Vol. 95, No. 7, pp. 3819-3821.
Canham LT. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers.Applied physics letters, 1990, Vol. 57, No. 10, pp. 1046-1048.
Hybersen MS. Absorption and emission of light in nanoscale silicon structures.Physical review letters. 1994, Vol. 72, No. 10, pp. 1514.
Amri С., OuertaniR., HamdiA., et al. Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays. Materials & Design, 2016, Vol. 111, pp. 394-404.
Al-Douri Y., Badi N., Voon C. H. Etching time effect on optical properties of porous silicon for solar cells fabrication.Optik, 2017, Vol. 147, pp. 343-349.
Abd Rahim A. F., Hashim M. R., Ali N. K.High sensitivity of palladium on porous silicon MSM photodetector.Physica B: Condensed Matter, 2011, Vol. 406, No. 4, pp. 1034-1037.
Andersen O.K., Veje E. Experimental study of the energy-band structure of porous silicon.Physical review B, 1996, Vol. 53, No. 23, pp. 15643-15651.
Wolkin M.V., Jorne J., Fauchet P.M., Allan G., Delerue C. Electronic States and Luminescence in Porous Silicon Quantum Dots. Phys. Rev. Letters, 1999, Vol. 82, No. 1, pp. 197-200.
Gaburro Z., Daldossoh N., &Pavesi L. Porous Silicon.Reference Module in Materials Science and Materials Engineering, 2016, doi:10.1016/b978-0-12-803581-8.01134-6.
Praveenkumar S. et al.An experimental study of optoelectronic properties of porous silicon for solar cell application.Optik, 2019, Vol. 178, pp. 216-223.
Al-Douri Y., Ahmed N.M., Bouarissa N., Bouhemadou A. Investigated optical and elastic properties of Porous silicon: Theoretical study. Materials & Design, 2011, Vol. 32, No. 7, pp. 4088-4093.
Das M. M. et al. Estimation of oxide related electron trap energy of porous silicon nanostructures. Materials Chemistry and Physics, 2010, Vol. 119, No. 3, pp. 524-528.
Sheng C. K. et al. Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique. Physica B: Condensed Matter, 2008, Vol. 403, No. 17. pp. 2634-2638.
Zhang T. T. et al. Cr-doped BaSnO3nanoporous thin films with tunable band gap via a facile colloidal solution route. Chemical Physics, 2019, Vol. 522. pp. 91-98.
Mergen Ö. B., Arda E. Determination of Optical Band Gap Energies of CS/MWCNT Bio-nanocomposites by Tauc and ASF Methods. Synthetic Metals, 2020, Vol. 269, pp. 116539.
"
