ELECTROPHYSICAL PROPERTIES OF NEW NANOSTRUCTURED COPPER-ZINC MANGANITE OF LANTHANUM AND MAGNESIUM
Authors
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Bulat Kasenov
Abishev Chemical-Metallurgical Institute
-
Shuga Kasenova
Abishev Chemical-Metallurgical Institute
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Zhenisgul Sagintaeva
Abishev Chemical-Metallurgical Institute
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Erbolat Kuanyshbekov
Abishev Chemical-Metallurgical Institute
- Zhanaly Bekturganov E.A. Buketov Karaganda University
- Asylbek Zeynidenov E.A. Buketov Karaganda University
DOI:
https://doi.org/10.31489/2022No2/42-47Keywords:
copper-zinc manganite, lanthanum, magnesium, nanostructured particles, electron microscopy, X-ray, electrophysics, semiconductorAbstract
The polycrystalline copper-zinc manganite was synthesized by the solid-phase interaction in the range of 800-1200 °C of oxides of lanthanum (III), copper (II), zinc (II), manganese (III) and magnesium carbonate, thus its nanostructured particles were first obtained by grinding on the vibrating mill “Retsch” (Germany). The X-ray investigations determined that the nanostructured manganite is crystallized in the cubic syngony. On the LCR7817/827 device (Company «Good Will Instrument Co., Ltd., Taiwan») in the range of 293-483 K at frequencies equal to 1.5 and 10 kHz, the dielectric constant and electrical resistance were investigated and it was found that this compound at 293-353 K has the semiconductor conductivity, at 353-373 K - metal and at 373-483 K - semiconductor conductivity again. The band gap widths were calculated. The permittivity at 483 K reaches gigantic values at all frequencies. Referring to the above, the objective of this paper is to study the temperature dependence of the dielectric constant and the electrical resistance of a new nanostructured copper-zinc manganite of lanthanum and magnesium.
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