PHOTOLUMINESCENCE SPECTRA OF DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS

S.Sh. Yegemberdiyeva; B.Zh. Kushkimbayeva; M.R. Kusherbayeva; M.T. Keikimanova

doi:10.31489/2025N1/127-133

Authors

DOI:

https://doi.org/10.31489/2025N1/127-133

Keywords:

photoluminescence of crystals, indium antimonide, Fermi level, doping, concentration, fluctuation, hole, band gap

Abstract

This paper presents a detailed study of photoluminescence of doped indium antimonide crystals. We have conducted a detailed study of photoluminescence of doped n-type indium antimonide crystals in a wide range of concentrations 1*10¹⁵ cm^-3-1.5*10¹⁹ cm^-3at temperature 77 K. In this paper, we have for the first time obtained spectra of photoluminescence of indium antimonide with n > 5*10¹⁷ cm^-3 and experimentally discovered that spectrum of photoluminescence of indium antimonide with n ≥ 8.5*10¹⁶ cm^-3 consists of two lines, maxima of which shift towards higher energies with increasing concentration. It has been established that shortwave line of doped n-type indium antimonide crystals’ radiation is caused by recombination of electrons, located at Fermi level, with holes in valence band top. It has been shown that the best agreement between the experiment and theory in heavily doped crystals is reached by taking into account fluctuations of donor concentrations, dependence of the band gap on the degree of doping, as well as effective reduction of Fermi energy with increasing concentration.

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PHOTOLUMINESCENCE SPECTRA OF DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS