OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

J.SH. Abdullayev; I.B. Sapaev

doi:10.31489/2024No3/21-28

Authors

DOI:

https://doi.org/10.31489/2024No3/21-28

Keywords:

Space charge density, doping concentration, modeling, calibration, optimization

Abstract

In this paper, we investigate the effects of doping and temperature (at 300 K and 400 K) on the characteristics of Silicon (Si) and Gallium Arsenide (GaAs) p-n and p-i-n homojunction structures, utilizing doping concentrations of p⁺= n⁺=2∙10¹⁷ and p=n=10¹⁶ cm^-3 through numerical calculation and modeling. Furthermore, we have analyzed three different cases: A) p-n, B) p⁺-n, and C) p-n⁺, to examine their influence on the distributions of space charge, potential, electric field, minority charge carriers, and the I-U curve at 300 K. It can be seen from the results that in case A, the recombination process is not observed at a lower voltage in the symmetrical p-n junction compared to than case B and C asymmetrical p-n junction. The voltage-temperature characteristics of the prepared samples were then measured at a temperature of 300K. I-U curve at 300 K. Calibration of the Si p-n homojunction structures is performed using experimental data to validate the proposed model. With the help of this constructed complex model, the influence of various geometrical changes, such as the radial p-n transition, on electrophysical properties will be examined in our next work.

Author's detail

J.SH. Abdullayev

Abdullayev, Jo`shqin Shakirovich – PhD, Senior Research, Senior Lecture, National Research University TIIAME, Tashkent, Uzbekistan; Scopus Author ID: 58258727900; ORCID iD:0000-0001-6110-6616; j.sh.abdullayev6@gmail.com

I.B. Sapaev

Sapaev, Ibrokhim Bayramdurdievich – PhD (Phys.), Associate professor, Head of the department «Physics and chemistry». National Research University TIIAME, Tashkent, Uzbekistan; Western Caspian University, Scientific researcher, Baku, Azerbaijan; Scopus Author ID: 56102062900; ORCID iD: 0000-0003-2365-1554; sapaevibrok him@gmail.com

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OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES